| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method for semiconductor device with which dust or foreign substances stuck on the front side and rear side of a wafer can be surely removed. SOLUTION: This method has a process for forming an insulating isolate layer 13 on the surface of a wafer 11, with which an active element or the like is formed on a silicon semiconductor substrate 12, when forming wiring 16 having a prescribed pattern on the front side of the wafer 11, a process for forming a wiring metal layer on the insulating isolate layer 13, a process for forming a mask on the wiring metal layer by photolithography, a process for forming the wiring 16 of the prescribed pattern by applying anisotropic ion etching to the wiring metal layer while using the mask, a process for removing the mask and a metal containing organic substance formed by the anisotropic ion etching by oxygen plasma treatment, a process for removing dust 18 or the like by selectively treating the rear side of the wafer, from which the mask is removed, by jetting out pure water, and a process for applying batch chemical treatment to the wafer, with which the rear side is selectively treated.
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