| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having a redundancy system having high relieving efficiency. SOLUTION: This memory is provided with a plurality of first normal elements comprising assembly of memory cells of a first direction and a first selecting line for selecting the assembly, a plurality of second normal elements comprising assembly of memory cells of a second direction and a second selecting line for selecting the assembly and selecting a memory cell cooperating with the first normal element corresponding respectively, a plurality of first redundant elements arranged to replace a defective first normal element, and a plurality of second redundant elements arranged to replace a defective second normal element. At least two elements of the first normal elements are simultaneously activated, they are independently controlled as to they are replaced by the first redundant elements or not, one of the second redundant elements replacing a defective second normal element within a first relieving region including one of the first normal element activated simultaneously does not intersect with one of the first normal elements activated simultaneously.
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