| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for preventing short-circuit between a contact hole and metal wiring in a semiconductor device. SOLUTION: This method consists of a step for forming a first conducting layer 80 in the bottom of each contact hole 15 so as to partially fill the contact hole 15, a step for forming a liner layer 50 on an inner wall of each contact hole 15 in order to reduce an aperture of the contact hole 15, a step for forming a trench for the metal wiring 25, and a step for forming a second conducting layer on the first conducting layer 80 in each contact hole 15. |
