发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To reduce the thickness of semiconductor devices, by grinding a resin- sealed block and to equally grind the resin-sealed block by removing bending of it. SOLUTION: The semiconductor devices 10 are manufactured through a process (B) for facedown mounting a plurality of semiconductor chips 11 onto the surface of a board 12, a process (C) for feeding mold resin 13 onto the board 12 to mold the resin-sealed block 18 for sealing the plurality of semiconductor chips 11, a process (E) for half-cutting the resin-sealed block 18 from the side of the board 12, and a process (F) for grinding the resin-sealed block 18 from the side of the mold resin 13 for separating the individual semiconductor devices 10.
申请公布号 JP2003060118(A) 申请公布日期 2003.02.28
申请号 JP20010245359 申请日期 2001.08.13
申请人 TEXAS INSTR JAPAN LTD 发明人 MASUMOTO MUTSUMI;MASUMOTO KENJI
分类号 H01L23/12;H01L21/48;H01L23/31;H01L23/433 主分类号 H01L23/12
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