| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for etching a PZT film capable of preventing side etching. SOLUTION: A Pt film 3, a PZT film 4 and an Ir film 5 are sequentially formed on a substrate 2. A hard mask 8 made of SiO2 is formed on the Ir film 5. Thereafter, the substrate having these multi-layered films is mounted in a plasma etching chamber and a stage temperature is set to about 310 deg.C. Subsequently, the Ir film 5 is etched with use of etching gases such as Cl2 and O2 gasses and the hard mask 8 to form an Ir electrode 9. The PZT film 4 is then etched with use of BCl3 , Ar and CHF3 gases to form a dielectric part 10. Subsequently, the Pt film 3 is etched with use of Cl2 and O2 gases to form a Pt electrode 11. As a result, a ferroelectric capacitor is completed.
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