发明名称 |
Method of making thermally stable planarizing films |
摘要 |
Disclosed is a method of protecting semiconductor areas while exposing a structures for processing on a semiconductor surface, the method comprising depositing a planarizing high density plasma film of a silicon compound, selected from the group silicon oxide and silicon nitride, depositing a planarized polymer film to a thickness effective in protecting said high density plasma film while leaving high density plasma excess exposed, and etching away said high density plasma excess.
|
申请公布号 |
US2003038109(A1) |
申请公布日期 |
2003.02.27 |
申请号 |
US20010938097 |
申请日期 |
2001.08.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, NEW YORK, |
发明人 |
DOKUMACI OMER H.;DORIS BRUCE B.;BELYANSKY MICHAEL P. |
分类号 |
H01L21/3105;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|