发明名称 |
Method of fabricating a NROM cell to prevent charging |
摘要 |
The present invention provides a method of fabricating an NROM cell and preventing charging. An oxide-nitride-oxide (ONO) layer and bit line masks are formed on the ONO layer of the memory array area and an implantation process forms buried bit lines within the substrate. Rows of word lines can then be formed on the ONO layer approximately perpendicular to the buried bit lines. Finally, a spacer is formed on sidewalls of each word line, and a barrier layer and a passivation layer used for preventing the NROM cell being charged during process is respectively formed on the surface of the substrate.
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申请公布号 |
US2003040152(A1) |
申请公布日期 |
2003.02.27 |
申请号 |
US20010682337 |
申请日期 |
2001.08.22 |
申请人 |
LIU CHEN-CHIN;SUNG JIANN-LONG |
发明人 |
LIU CHEN-CHIN;SUNG JIANN-LONG |
分类号 |
H01L21/336;H01L21/8246;H01L27/115;(IPC1-7):H01L21/824;H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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