发明名称 Active matrix substrate, method of manufacturing same, and flat-panel image sensor
摘要 In an active matrix substrate, a glass substrate is provided with TFTs having gate electrodes connected to scanning lines also provided on the glass substrate. The glass substrate is further provided with auxiliary capacitance lines, formed on the same layer as the scanning lines. Further, pixel electrodes connected to drain electrodes of the TFTs are formed on the same layer as signal lines connected to source electrodes of the TFTs. An insulating layer is provided between the layer forming the signal lines and pixel electrodes and the layer forming the drain and source electrodes. Since the insulating film is present between the signal lines and the scanning and auxiliary capacitance lines, influence on the auxiliary capacitance value can be reduced, as can a signal line capacitance value. As a result, even when the auxiliary capacitance value is increased, the signal line capacitance value remains small.
申请公布号 US2003038306(A1) 申请公布日期 2003.02.27
申请号 US20020227804 申请日期 2002.08.27
申请人 SHARP KABUSHIKI KAISHA 发明人 IZUMI YOSHIHIRO;NAGATA HISASHI;SAITO YUICHI
分类号 H04N5/32;G02F1/1333;G02F1/136;G02F1/1362;G02F1/1368;H01L21/77;H01L21/84;H01L23/52;H01L27/12;H01L27/13;H01L27/14;H01L29/786;H04N5/335;H04N5/369;(IPC1-7):H01L21/84;H01L27/148;H01L29/768;H01L31/112 主分类号 H04N5/32
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