发明名称 BRITTLE MATERIAL SUBSTRATE CHAMFERING METHOD AND CHAMFERING DEVICE
摘要 <p>A first laser spot (LS1) in elliptic shape having one end positioned on an edge (51) to be chamfered included in the side edges of a glass substrate (50). The major axis of the first laser spot (LS1) is inclined by an angle θ with respect to the edge, and the other end is positioned on the portion in vicinity of the edge (51). The heat energy intensity of the first laser spot (LS1) is low at the end positioned on the portion in the vicinity of the edge (51) and highest at the end positioned on the edge (51) to be chamfered. When the glass substrate (50) is moved in the X-direction, the first laser spot (LS1), after preheating the portion of the glass substrate (50) in the vicinity of the edge (51), melts and chamfers the edge (51). Further, after the edge (51) has been melted and chamfered, the substrate is heated by a second laser spot and then annealed, thereby making it possible to mitigate the residual stress and prevent the occurrence of fine cracks. Thereby, the edge (51) of the glass substrate can be reliably chamfered without producing cracks.</p>
申请公布号 WO2003015976(P1) 申请公布日期 2003.02.27
申请号 JP2002008203 申请日期 2002.08.09
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