Chemically-enhanced photo-resist for use, e.g. in the production of structured chips for the semiconductor industry, comprises a solution of acid-labile polymer containing fluorinated cinnamate monomer units

摘要

Chemically-enhanced photo-resist (I) comprising a polymer with acid-labile groups which undergo cleavage to polar groups so as to increase solubility in aqueous alkaline developers, plus a photo-acid former and solvent, in which the polymer contains first repeat units derived from at least mono-fluorinated or fluoroalkyl-substituted cinnamic acid or cinnamate esters. An Independent claim is also included for a method for structuring substrates by coating the substrate with (I), exposing parts of the resulting photo-resist film to light with a wavelength of less than 200 nm and developing the exposed film to form a structure which is transferred to the substrate.