发明名称 |
Process for producing semiconductor device |
摘要 |
By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semicondictor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.
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申请公布号 |
US2003040191(A1) |
申请公布日期 |
2003.02.27 |
申请号 |
US20010946507 |
申请日期 |
2001.09.06 |
申请人 |
KITSUNAI HIROYUKI;TANAKA JUNICHI;FUJII TAKASHI;YOSHIGAI MOTOHIKO |
发明人 |
KITSUNAI HIROYUKI;TANAKA JUNICHI;FUJII TAKASHI;YOSHIGAI MOTOHIKO |
分类号 |
H01L21/302;H01L21/306;H01L21/3065;H01L21/3213;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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