发明名称 Process for producing semiconductor device
摘要 By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semicondictor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.
申请公布号 US2003040191(A1) 申请公布日期 2003.02.27
申请号 US20010946507 申请日期 2001.09.06
申请人 KITSUNAI HIROYUKI;TANAKA JUNICHI;FUJII TAKASHI;YOSHIGAI MOTOHIKO 发明人 KITSUNAI HIROYUKI;TANAKA JUNICHI;FUJII TAKASHI;YOSHIGAI MOTOHIKO
分类号 H01L21/302;H01L21/306;H01L21/3065;H01L21/3213;H01L21/461;(IPC1-7):H01L21/302 主分类号 H01L21/302
代理机构 代理人
主权项
地址