INTEGRATED CIRCUIT COMPRISING DRAM MEMORY CELLS AND THE PRODUCTION METHOD THEREFOR

摘要

The invention relates to an integrated circuit comprising: transistors which are disposed in a substrate (3); an insulating layer (105) which covers the transistors; and a capacitor C, the base of the lower electrode (126) of said capacitor being disposed at the upper interface of the insulating layer (105). Metallic pins, which extend out from either side of the insulating layer (105), are used to connect the lower electrode of the capacitor to a component of the integrated circuit and to provide electrical connections to components adjacent to the integrated circuit.