发明名称 Thin film transistor and method of making same
摘要 Disclosed are a thin film transistor capable of controlling gray level of an organic LED element by discretely controlling current levels, a method of manufacturing the thin film transistor, an array substrate including the thin film transistor, a display device, and a method of driving the display device. The thin film transistor of the present invention includes an active layer formed on an insulating substrate, a plurality of insulating layers formed oppositely to each other with the active layer interposed therebetween, a first gate electrode and a second gate electrode formed adjacently to the insulating layers respectively, and wiring connected to the first and second gate electrodes respectively, the wiring controlling respective potentials of the first and second gate electrodes independently of each other. The area of the first gate electrode is different from the area of the second gate electrode, and current levels can be discretely controlled in at least four levels.
申请公布号 US2003038288(A1) 申请公布日期 2003.02.27
申请号 US20020222339 申请日期 2002.08.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 SUZUKI HIROSHI;TSUJIMURA TAKATOSHI
分类号 G02F1/1368;G09F9/00;G09F9/30;G09G3/32;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;H01L51/50;(IPC1-7):H01L29/04 主分类号 G02F1/1368
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