Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the same

摘要

An insulating layer is formed on a whole surface of a wafer. Recesses such as wiring grooves are formed in the insulating layer. A part of the insulating layer is removed on a region whose distance from the peripheral edge of the wafer is a value x or less. After a conductive film is formed on the whole wafer surface, a part is removed on a region whose distance from the peripheral wafer edge is a value y (y<x) or less. Chemical mechanical polishing removes a part of the conductive except in the recesses. Thereafter, wet etching removes part of the conductive film on a region from the peripheral wafer edge of z (x<z) or less. An interlayer insulating film is formed on the whole wafer surface.