发明名称 |
Plasma treating apparatus and plasma treating method |
摘要 |
In a plasma treating apparatus for carrying out a plasma treatment over a silicon wafer 6 having a protective tape 6a stuck to a circuit formation face, the silicon wafer 6 is mounted on a mounting surface 3d which is provided on an upper surface of a lower electrode 3 formed of a conductive metal with the protective tape 6a turned toward the mounting surface 3d. When a DC voltage is to be applied to the lower electrode 3 by a DC power portion 18 for electrostatic adsorption to adsorb and hold the silicon wafer 6 onto the lower electrode 3 in the plasma treatment, the protective tape 6a is utilized as a dielectric for the electrostatic adsorption. Consequently, the dielectric can be thinned as much as possible and the silicon wafer 6 can be held by a sufficient electrostatic holding force.
|
申请公布号 |
US2003037882(A1) |
申请公布日期 |
2003.02.27 |
申请号 |
US20020227930 |
申请日期 |
2002.08.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ARITA KIYOSHI;IWAI TETSUHIRO;TERAYAMA JUNICHI |
分类号 |
H01L21/3065;H01L21/683;(IPC1-7):H01L21/306;C23F1/00;C23C16/00 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|