发明名称 METHOD OF FORMING A VACUUM MICRO-ELECTRONIC DEVICE
摘要 <p>A vacuum microelectronic device (10, 40) is formed by applying a first conductor (13, 14) to an optically transparent substrate (11) and utilizing the first conductor (13, 14) to expose a dielectric material (18) and a second conductive material (19) from a back surface of the substrate (11). A second conductor (29) and a dielectric (28) are formed from the second conductive material (19) and the dielectric material (18), respectively. This method self-aligns the dielectric (28) and the second conductor (29) with the first conductor (13, 14). Electron emitters (31, 33) of the vacuum microelectronic device (10, 40) are formed on the first conductor (13, 14).</p>
申请公布号 WO2003017311(A1) 申请公布日期 2003.02.27
申请号 US2002024159 申请日期 2002.07.24
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