Storing faulty element e.g. of semiconductor memory, by determining maximum number of rows and columns required and storing error pattern in e.g. SRAM

摘要

A maximum number of lines in which a faulty element can be replaced by a redundant element in an redundant row or column is determined based on the number of redundant lines and the number of redundant columns. An error memory, such as an SRAM is provided with a number of rows and columns according to this maximum number. Entries in the error memory are stored relating to the row and column of the faulty element. The device is judged to be irreparable if there are insufficient rows or columns. An Independent claim is also included for an apparatus for storing an error pattern of an electronic component.