| 摘要 |
In a semiconductor device such as a CSP, re-wiring is provided on a circuit element formation region of a semiconductor substrate and a columnar electrode for connection with a circuit board is provided on the re-wiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film on the circuit element formation region. A re-wiring is provided over the ground potential layer with a second insulating film interposed. Since the ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region, it is possible to eliminate crosstalk between the re-wiring and a circuit within the circuit element formation region and to freely position the re-wiring without restrictions. Furthermore, a thin-film circuit element may be provided at a given location on the second insulating film. In a structure wherein the thin-film circuit element is provided on the second insulating film, a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed, and re-wiring is provided over the second ground potential layer with an insulating film interposed. Thereby, crosstalk between the re-wiring and thin-film circuit element can be eliminated, and the re-wiring can be freely positioned without restriction. |
