发明名称 Semiconductor memory device and method of manufacturing semiconductor device with chip on chip structure
摘要 A semiconductor memory device for use in a semiconductor device with a chip on chip structure, which enables a memory specification to be selected and fixed, and improves design and production efficiencies. Bonding bumps corresponding to an input terminal and an output terminal of an interface circuit are connected to bonding bumps provided on another semiconductor device. Then, a polarity of a potential on a bus width varying terminal is fixed by the bonding bump provided on another semiconductor device, so that an isolated input/output specification is selected as a bus specification of the interface circuit and a bus width is selected.
申请公布号 US2003040140(A1) 申请公布日期 2003.02.27
申请号 US20020227083 申请日期 2002.08.22
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAKAI NOBUYUKI
分类号 G11C11/401;G11C16/02;H01L21/336;H01L21/44;H01L21/8234;H01L23/16;H01L23/48;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/44 主分类号 G11C11/401
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