摘要 |
<p>High quality layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22, 2615) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24,2610) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating bufferlayer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The use of monocrystalline piezoelectric material as an overlying layer (2605) is disclosed to facilitate the fabrication of on-chip high frequency communications devices such as microwave SAW devices with direct interface to high speed semiconductor devices in the integrated circuit.</p> |