| 摘要 |
FIELD: microelectronics, technology of manufacture of gaseous discharge equipment. SUBSTANCE: process includes prefiring of cathode in vacuum not below 10-5 mm Hg at temperature of 400- 450 C for 3.0-5.0 h, assembly of active element, its sealing, pumping out, degassing, thermal oxidation of cathode and filling of active element with mixture of working gases. Cathode is oxidized outside of active element, immediately after termination of its prefiring at steady-state temperature. Oxidized cathode can be kept in atmosphere not more than 5.0 h, active element is degassed at temperature of 100- 300 C, immediately after completion of degassing of active element cathode is subjected to repeat oxidation at steady-state temperature. EFFECT: prolonged service life of active element. 2 cl, 4 dwg |
