| 摘要 |
An n-GaAs buffer layer, an n-Alz1Ga1-z1As cladding layer, an n- or i-In0.49Ga0.51P waveguide layer, an i-Inx3Ga1-x3As1-y3Py3 barrier layer, a compressive strain Inx1Ga1-x3As1-y3Py3 quantum well active layer, an i-Inx3Ga1-x3As1-y3Py3 upper barrier layer, and an In0.49Ga0.51P cap layer are laminated on an n-GaAs substrate. Regions near facets of the barrier layer to the cap layer are removed, and a p- or i-type In0.49Ga0.51P upper optical waveguide layer is laminated on the cap layer to fill in the removed portions. A p-GaAs etching stop layer, an n-In0.49(Alz2Ga1-z2)0.51P current confinement layer having an opening, an n-In0.49Ga0.51P second cap layer, a p-In0.49Ga0.51P second upper optical waveguide layer 34 and a p-Alz1Ga1-z1As upper cladding layer are laminated thereon, and a p-GaAs contact layer is formed inwardly except near the facets on the laminated surface, and an insulation film is formed on the regions near the facets, and a p-side electrode is provided as an uppermost layer.
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