发明名称 |
Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system |
摘要 |
An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature trapping device (28) decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel (10) to trap metallic copper. The low-temperature trapping device traps Cu(II)(hfac)2 produced as a reaction byproduct.
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申请公布号 |
US2003037730(A1) |
申请公布日期 |
2003.02.27 |
申请号 |
US20020277914 |
申请日期 |
2002.10.23 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YAMASAKI HIDEAKI;KAWANO YUMIKO;KUBO KENICHI;ARIMA SUSUMU |
分类号 |
B01D53/64;C23C16/18;C23C16/44;C23C16/455;H01L21/285;H01L21/31;H01L21/3205;H01L23/52;(IPC1-7):C23C16/00;H01L21/306;C23F1/00 |
主分类号 |
B01D53/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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