发明名称 Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system
摘要 An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature trapping device (28) decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel (10) to trap metallic copper. The low-temperature trapping device traps Cu(II)(hfac)2 produced as a reaction byproduct.
申请公布号 US2003037730(A1) 申请公布日期 2003.02.27
申请号 US20020277914 申请日期 2002.10.23
申请人 TOKYO ELECTRON LIMITED 发明人 YAMASAKI HIDEAKI;KAWANO YUMIKO;KUBO KENICHI;ARIMA SUSUMU
分类号 B01D53/64;C23C16/18;C23C16/44;C23C16/455;H01L21/285;H01L21/31;H01L21/3205;H01L23/52;(IPC1-7):C23C16/00;H01L21/306;C23F1/00 主分类号 B01D53/64
代理机构 代理人
主权项
地址
您可能感兴趣的专利