发明名称 Semiconductor device and method for the fabrication thereof
摘要 Disclosed is a semiconductor device which comprises a semiconductor element having a plurality of electrodes, a plurality of external electrodes disposed around the periphery of the semiconductor element, a fine wire electrically connected between at least one of surfaces of each of the plural external electrodes and at least one of the plural electrodes of the semiconductor element, and an encapsulating resin which encapsulates the semiconductor element, the plural external electrodes, and the fine wires and whose external shape is a rectangular parallelepiped, wherein a bottom surface of the semiconductor element and a bottom surface of each of the plural external electrode are exposed from a bottom surface of the encapsulating resin and a top surface of the semiconductor element and a top surface of each of the plural external electrode are located substantially coplanar with each other.
申请公布号 US2003038359(A1) 申请公布日期 2003.02.27
申请号 US20020259661 申请日期 2002.09.30
申请人 FUJIMOTO HIROAKI;HAMATANI TSUYOSHI;NOMURA TORU 发明人 FUJIMOTO HIROAKI;HAMATANI TSUYOSHI;NOMURA TORU
分类号 H01L23/12;H01L21/48;H01L21/56;H01L23/28;H01L23/31;H01L23/48;H01L23/50;H01L25/10;(IPC1-7):H01L23/48 主分类号 H01L23/12
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