PROVIDING PHOTONIC CONTROL OVER WAFER BORNE SEMICONDUCTOR DEVICES

摘要

Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710). Photonic flow control ca n be achieved through the formation of trenches (1725) and/or insulating implants (1730) formed in said wafer (1700), whereby active regions (1760) a re defined by trenches (1725) that operate as nonconductive areas (1750). Metho ds of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.