| 摘要 |
<p>A chemical vapor phase epitaxial device, comprising a susceptor support stand (1) and a susceptor (2) rotated by a rotating shaft (5), wherein a large clearance (11) of approx. 1 mm or more is provided in a boundary between the ends of the support stand (1) and the susceptor (2) to prevent bridging by Ga from occurring in the boundary between the support stand (1) and the susceptor (2) when a III-V group compound semiconductor such as GaN is grown so that a rotational trouble cannot be produced.</p> |
