| 摘要 |
A semiconductor laser device including a lower cladding layer stacked on a compound semiconductor substrate, an active layer stacked on the lower cladding layer, an upper first cladding layer stacked on the active layer, a ridge-shaped upper second cladding layer provided on the upper first cladding layer, current blocking layers provided on both sides of the upper second cladding layer, and a contact layer provided on the upper second cladding layer. The distance between the upper surface of the active layer and the upper surface of the upper second cladding layer is shorter than the distance between the lower surface of the lower cladding layer and the lower surface of the active layer.
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