发明名称 |
Axial gradient transport appatatus and process for producing large size, single crystals of silicon carbide |
摘要 |
Disclosed is an apparatus and a method for growing single crystals of materials such as silicon carbide through axial gradient transport. A source of the material (10) is placed at one end of a reaction chamber (2) opposite a seed crystal (13). Separate heating elements (16 and 60; 20 and 62) are positioned at opposite ends of the reaction chamber. The reaction chamber (2) is placed in a pressurized growth chamber (26). By appropriately controlling the pressure in the growth chamber (26) and the temperature of the heating elements (16, 20), including the temperature differential therebetween, a uniaxial temperature gradient is generated in the reaction chamber (2). In this manner, substantially planar isotherms are generated and a high quality crystal can be grown through a physical vapor transport process.
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申请公布号 |
US2003037724(A1) |
申请公布日期 |
2003.02.27 |
申请号 |
US20020221426 |
申请日期 |
2002.09.11 |
申请人 |
SNYDER DAVID W.;EVERSON WILLIAM J. |
发明人 |
SNYDER DAVID W.;EVERSON WILLIAM J. |
分类号 |
C30B23/06;C30B23/00;C30B25/22;C30B29/36;C30B35/00;H01L21/203;(IPC1-7):C30B25/00;C30B28/12;C30B15/00;C30B27/02;C30B28/10;C30B30/04;C30B28/14;C30B21/06 |
主分类号 |
C30B23/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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