| 摘要 |
<p>A method for concurrently fabricating a double polysilicon bipolar transistor and a base polysilicon resistor. The method of the present invention constructs a polysilicon resistor in the base polysilicon layer of a salicided double polysilicon integrated circuit process. The overlying emitter polysilicon layer of the bipolar transistor is used to blocksilicidation of the resistor body base polysilicon.</p> |
