METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

摘要

PURPOSE: A method for manufacturing a thin film transistor substrate is provided to improve the electric characteristics of thin film transistors by removing protrusions of a polycrystalline silicon layer. CONSTITUTION: A method for manufacturing a thin film transistor substrate includes the steps of vapor depositing an amorphous silicon layer on a substrate(10); forming a polycrystalline silicon layer(20S) by crystallizing the amorphous silicon layer through laser annealing; planarizing the surface of the polycrystalline silicon layer by processing with cathode water; forming a semiconductor pattern by patterning the polycrystalline silicon layer; forming a gate insulating film covering the semiconductor pattern; forming gate electrodes overlapping with the part of the semiconductor pattern on the gate insulating film; forming source and drain areas on the semiconductor pattern by pouring impurities into the semiconductor pattern; forming an interlayer insulating film covering the gate electrodes and the semiconductor pattern; and forming pixel electrodes electrically connected to the source areas on the interlayer insulating film.