Method to reduce photoresist contamination from silicon carbide films

摘要

Silicon carbide layers are often used as hardmask layers in semiconductor processing. The photoresist used to pattern the silicon carbide layers during the hardmask patterning process can become poisoned by the silicon carbide layer and remain attached to the silicon carbide surface. According to the method of the instant invention a trimethylsilane and oxygen treatment of the silicon carbide growth chamber prior to layer growth will reduce the photoresist poisoning.