发明名称 RAW MATERIAL FOR CVD AND METHOD FOR PRODUCING THE SAME AND METHOD FOR CHEMICAL VAPOR DEPOSITION OF RUTHENIUM OR RUTHENIUM COMPOUND THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a raw material compound which contains an organic ruthenium compound as a main component, is used for CVD, has a low melting point and excellent solubility in organic solvents, and can form thin films having good homology, and to provide a method for producing the same. SOLUTION: This raw material compound which contains the organic ruthenium compound as a main component and is used for CVD is characterized in that the organic ruthenium compound comprises only either one of the cis and trans isomers of tris(2,4-octadionato)ruthenium(III) represented by the formula. The method for producing the raw material compound which comprises only the cis isomer or trans isomer and is used for CVD is characterized by comprising a process for allowing an alumina-containing adsorbent to adsorb the tris(2,4- octadionato)ruthenium(III) produced by an arbitrary method, a process for bringing the adsorbent into contact with the first solvent to elute the trans isomer, and further a process for bringing the adsorbent into contact with the second solvent having larger polarity than that of the first solvent to elute the cis isomer.
申请公布号 JP2003055294(A) 申请公布日期 2003.02.26
申请号 JP20010243927 申请日期 2001.08.10
申请人 TANAKA KIKINZOKU KOGYO KK 发明人 SAITO MASAYUKI;YANAI JUNICHI;OKAMOTO KOJI;SUZUKI HIROAKI
分类号 C07C45/79;C07C49/92;C07F15/00;C23C16/18;H01L21/02;H01L21/28;H01L21/285;(IPC1-7):C07C49/92 主分类号 C07C45/79
代理机构 代理人
主权项
地址