发明名称 |
METHOD FOR DEPOSITING SUPERCONDUCTING THIN FILM USING MOCVD PROCESS |
摘要 |
PROBLEM TO BE SOLVED: To deposit an RE-Ba-Cu-O based superconducting thin film which has a large area and uniform compositional ratio by an MOCVD(metal organic chemical vapor deposition) process. SOLUTION: The superconducting thin film is deposited on a substrate by the MOCVD process. In this case, as a raw material MO gas of Cu, an amine adduct of Cu(DPM)2 is used, so that the consumption of the MO gas caused by thermal decomposition before its arrival at the substrate can be prevented.
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申请公布号 |
JP2003055766(A) |
申请公布日期 |
2003.02.26 |
申请号 |
JP20010245139 |
申请日期 |
2001.08.13 |
申请人 |
INTERNATL SUPERCONDUCTIVITY TECHNOLOGY CENTER |
发明人 |
KOKUBU HIROSHI;TANABE KEIICHI;MORISHITA TADATAKA |
分类号 |
C01G1/00;C01G3/00;C23C16/40;H01L39/24;(IPC1-7):C23C16/40 |
主分类号 |
C01G1/00 |
代理机构 |
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主权项 |
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