发明名称 METHOD FOR FORMING SILICON FILM OR SILICON OXIDE FILM AND COMPOSITION FOR THEM
摘要 PROBLEM TO BE SOLVED: To obtain a silane composition capable of forming a silicon film or a silicon oxide film on a substrate by using a liquid raw material with a simple operation and device different from a method requiring a complex vacuum system device such as a CVD method of sputtering method, efficiently e.g. in a high yield and forming speed, and to provide a method for forming the silicon film or the silicon oxide film by using the composition. SOLUTION: The silane composition contains a polysilane compound and at least 1 kind of a silane compound selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane. The method for forming the silicone film or the silicon oxide film comprises applying the silane composition on the base substrate and treating the formed coated film under a non-oxidizing atmosphere or an oxidizing atmosphere, respectively.
申请公布号 JP2003055556(A) 申请公布日期 2003.02.26
申请号 JP20010245947 申请日期 2001.08.14
申请人 JSR CORP 发明人 SHIHO KOUJI;KATO HITOSHI
分类号 C08L83/16;C08G77/60;C08K5/549;C09D1/00;C09D183/16;H01L21/208;H01L21/316;(IPC1-7):C08L83/16 主分类号 C08L83/16
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