发明名称 DEVICE AND METHOD FOR PULLING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a single crystal pulling device equipped with a temperature sensor capable of stably and accurately measuring the temperature of the surface of a melt while suppressing the effects of radiation heat from a single crystal and the wall of a crucible and to provide a single crystal pulling method by which the distance between a radiation screen and the surface of the melt is always controlled to be a constant value. SOLUTION: The single crystal pulling device is equipped with the temperature sensor which has a constitution that a graphite chip for receiving radiation heat from the surface of the melt in a crucible is provided and a thermo couple is brought into contact with the graphite chip, which is covered with a heat insulating material except its heat receiving face, through a nonmetal protection tube. The single crystal pulling method comprises measuring the temperature of the surface of the melt in the crucible and controlling the surface level of the melt according to the measurement results so as to keep the distance from the surface of the melt to the lower end part of the radiation screen constant.
申请公布号 JP2003055084(A) 申请公布日期 2003.02.26
申请号 JP20010240488 申请日期 2001.08.08
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 OKUI MASAHIKO;NISHIMOTO MANABU
分类号 C30B15/20;C30B29/06;(IPC1-7):C30B15/20 主分类号 C30B15/20
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