发明名称 |
METHOD FOR PRODUCING HEXAFLUOROETHANE AND USE THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide both a method for industrially and advantageously producing a high-purity hexafluorothane usable as an etching gas or a cleaning gas and the use thereof. SOLUTION: This method for producing the hexafluoroethane comprises (1) a step of reacting pentafluoroethane containing a chlorine-containing compound having 1-3 carbon atoms with hydrogen in the presence of a hydrogenating catalyst in the vapor phase at 150-400 deg.C and hydrogenating the chlorine- containing compound and (2) reacting the resultant product in the step (1) with fluorine in the presence of a diluting gas in the vapor phase and producing the hexafluoroethane.
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申请公布号 |
JP2003055277(A) |
申请公布日期 |
2003.02.26 |
申请号 |
JP20010247380 |
申请日期 |
2001.08.16 |
申请人 |
SHOWA DENKO KK |
发明人 |
ONO HIROMOTO;OI TOSHIO |
分类号 |
C11D7/30;C07B61/00;C07C17/10;C07C17/25;C07C19/08;C09K13/08;C11D7/50;H01L21/302;H01L21/3065;(IPC1-7):C07C17/10;H01L21/306 |
主分类号 |
C11D7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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