发明名称 SCANNING PROBE MICROSCOPE AND DETECTION METHOD FOR p-n JUNCTION POSITION BY USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a scanning capacitance microscope(SCM) with which a p-n junction position in a semiconductor sample can be specified with high detection sensitivity and to provide a measuring method using the SCM. SOLUTION: An AC voltage is applied across a conductive probe and the sample from an AC voltage application circuit 3a, a capacitance signal which is modulated by it is acquired by a capacitance sensor 4, and a second-order differential (d<2> C/dV<2> ) signal regarding the applied voltage is detected. For example, when the angular frequency of the applied AC voltage isω, by detecting a component which is changed by an angular frequency 2ωfrom among the capacitance signal with a lock-in amplifier (LCD) 17 and finding a position whose value takes an extreme value, the p-n junction position can be specified with high sensitivity and with high accuracy.
申请公布号 JP2003057163(A) 申请公布日期 2003.02.26
申请号 JP20010247863 申请日期 2001.08.17
申请人 NEC CORP 发明人 NAITO YUICHI;OKUBO NORIO
分类号 G01B7/00;G01B7/34;G01Q30/04;G01Q60/46;H01L21/66;(IPC1-7):G01N13/20;G01N13/10 主分类号 G01B7/00
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