发明名称 ETCHING SOLUTION AND ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress side etching as far as possible. SOLUTION: In carrying out etching of laminated films consisting of silver or a silver alloy by using an etching solution consisting of mixed acids composed of a phosphoric acid, nitric acid and acetic acid, the etching solution is made to flow and the flow intensity thereof is specified to a range from the fluid intensity at which the etching reaction starts up to the fluid intensity of 67% thereof.
申请公布号 JP2003055780(A) 申请公布日期 2003.02.26
申请号 JP20010245420 申请日期 2001.08.13
申请人 TOSHIBA CORP 发明人 KADO MASATERU;KIYOTA TOSHIYA
分类号 C23F1/30;(IPC1-7):C23F1/30 主分类号 C23F1/30
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