| 摘要 |
A semi-conductor diode base consists of an outer layer of silver or copper, an intermediate sintered layer consisting of by weight (a) 40-70 parts silver powder with 60-30 parts graphite powder, or (b) 38-69 parts copper powder with 62-31 parts graphite powder and an overlying layer of silver or copper. In the preferred method the outer layers of silver or copper are also sintered but these layers may also be flame sprayed on to the sintered intermediate layer. Separate layers of the required powders of minus 325 mesh are placed in a die and compacted together at 10-40 tons p.s.i. and then sintered at 1500 DEG F. in a vacuum or neutral atmosphere. The sintered composite may then be coined at 20-40 tons p.s.i. Alternatively the powder layers may be hot pressed. |
