| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-cooling low power consumption type infrared sensor. SOLUTION: The infrared sensor device is provided with a first tunnel element 101 and a second tunnel element 102 connected in series to each other by way of an SN node N104, and an MOS transistor 107 whose gate is connected to the SN node N104. When infrared light 108 is cast on the first tunnel element 101, the number of stable crossing of the voltage-current characteristic of the first tunnel element 101 and the voltage-current characteristic of the first tunnel element 102 varies and thus, yes/no of infrared irradiation is detected. Instead of the first tunnel element that infrared is cast, a resistor element or normal diode element can be used. By utilizing the variation of the minimum value of the voltage-current characteristic of the tunnel elements with temperature, the tunnel element can be used as an infrared sensor.
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