METHOD OF MANUFACTURING IN-PLANE LATTICE CONSTANT CONTROL SUBSTRATE AND IN-PLANE LATTICE CONSTANT CONTROL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of controlling the in-plane lattice constant of a substrate and an in-plane lattice constant control substrate. SOLUTION: A first epitaxial thin film 2 comprising a first material is formed on a substrate 1 at a first predetermined temperature, and then a second epitaxial thin film 6 comprising a second material containing the first material and another material capable of forming a solid solution with the first material in a predetermined component ratio is formed on the first epitaxial thin film 2, and further heat treatment is carried out at a second predetermined temperature. By the heat treatment at the second predetermined temperature, dislocations 4 are introduced and the lattice constant of the second epitaxial thin film 6 is alleviated to a value close to the lattice constant of a bulk crystal of the second material. A desired in-plane lattice constant can be realized by selecting the component ratio of another material in the second material.