| 摘要 |
The single crystal SiC according to the invention is produced in the following manner. Two complexes M in each of which a polycrystalline film 2 of beta -SiC (or alpha -SiC) is grown on the surface of a single crystal alpha -SiC substrate 1 by thermochemical deposition, and the surface 2a of the polycrystalline film 2 is ground so that the smoothness has surface roughness of 200 angstroms RMS or smaller, preferably 100 to 50 angstroms RMS are subjected to a heat treatment under a state where the complexes are closely fixed to each other via their ground surfaces 2a', at a high temperature of 2,000 DEG C or higher and in an atmosphere of a saturated SiC vapor pressure, whereby the polycrystalline films 2 of the complexes M are recrystallized to grow a single crystal which is integrated with the single crystal alpha -SiC substrates 1. Large-size single crystal SiC in which impurities, micropipe defects, and the like do not remain, and which has high quality can be produced with high productivity. |
