发明名称 APPARATUS AND METHOD FOR DEPOSITING FILM
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and a method for depositing a film in which deposition of a film on a dielectric window is prevented, a homogeneous plasma is formed by transmitting relatively large microwave power into a discharge space of large area consistently for a long time, and a film of high quality and excellent uniformity can be deposited when depositing the film by the plasma CVD method by introducing a microwave via the dielectric window. SOLUTION: In the apparatus and the method for depositing the film on the base material by the microwave plasma CVD method by introducing the microwave into the discharge space via the dielectric window, a plurality of thin plate-like members are disposed on the discharge space side of the dielectric window so as to form a space partitioned across the direction of the electric field by the plurality of thin plate-like members.
申请公布号 JP2003055773(A) 申请公布日期 2003.02.26
申请号 JP20010243474 申请日期 2001.08.10
申请人 CANON INC 发明人 SUKAI HIROSHI;KANAI MASAHIRO
分类号 G03G5/08;C23C16/511;H01L21/205;(IPC1-7):C23C16/511 主分类号 G03G5/08
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