| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing a metallic silicide film by which a metallic silicide film having satisfactory properties can be deposited at a lower temperature. SOLUTION: Plasma is generated while feeding a gaseous starting material into a treatment vessel capable of evacuation, and a metallic silicide film is deposited onto a body to be treated. In this method, the gaseous starting material is fed into the treatment vessel prior to the generation of the plasma. Thus, the metallic silicide film having satisfactory properties can be deposited at a lower temperature.
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