| 发明名称 |
METHOD OF PRODUCING A VERTICALLY INTEGRATED SEMICONDUCTOR COMPONENT |
| 摘要 |
<p>PCT No. PCT/DE96/02108 Sec. 371 Date May 19, 1998 Sec. 102(e) Date May 19, 1998 PCT Filed Nov. 6, 1996 PCT Pub. No. WO97/19462 PCT Pub. Date May 29, 1997A vertically integrated semiconductor component is provided with component levels disposed on different substrates. The substrates are joined by a connecting layer of benzocyclobutene and an electrical connection is provided between component levels by a vertical contact structure. A low-stress gluing is provided by the benzocyclobutene connecting layer.</p> |
| 申请公布号 |
EP0862788(B1) |
申请公布日期 |
2003.02.26 |
| 申请号 |
EP19960945708 |
申请日期 |
1996.11.06 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
LAUTERBACH, CHRISTL;WEBER, WERNER |
| 分类号 |
H01L21/58;H01L21/768;H01L21/98;H01L23/48;H01L23/522;H01L23/532;H01L25/065;H01L27/00;(IPC1-7):H01L21/98 |
主分类号 |
H01L21/58 |
| 代理机构 |
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