Method for manufacturing a metal oxide semiconductor with a sharp corner spacer

摘要

A method for manufacturing a metal oxide semiconductor device is provided comprising the steps of: performing an ion implantation to form a source/drain region in the substrate having a gate formed on it and a spacer formed on the sidewalls of the gate; forming a self-aligned silicide layer on the exposed surface of the gate and the source/drain region; removing a portion of the spacer to form a substantially triangular spacer with sharp corners; performing a tilted pocket implantation to form pocket regions within the substrate beside the gate, and controlling the location of the pocket regions and the dopant distribution by adjusting the energy and angle of the tilted pocket implantation; performing a tilted-angle implantation to form a source/drain extension within the substrate beside the gate and underlying the spacer; using the thermal cycle process to adjust the junction depth and the doping profile of the source/drain extension.