发明名称 Method of manufacturing phase grating image sensor
摘要 A method of manufacturing a phase grating image sensor is disclosed. The method uses conventional photolithography and etching methods to form a plurality of phase grating lenses into the conventional flattening layer on which the conventional micro-lens is formed. The invention thus utilizes phase gratings to replace the conventional micro-lens.
申请公布号 US6524772(B1) 申请公布日期 2003.02.25
申请号 US20010943017 申请日期 2001.08.30
申请人 UNITED MICROELECTRONICS CORP. 发明人 HUANG CHIN-WEN;SHIU JIAN-BIN
分类号 G02F7/00;H01L21/70;H01L27/14;H01L27/146;(IPC1-7):H01L27/14 主分类号 G02F7/00
代理机构 代理人
主权项
地址