SINGLE CRYSTAL SILICON WAFER HAVING GETTERING UNIT ON ITS REAR SURFACE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a single crystal silicon wafer is provided to improve reliability and quality of a wafer by forming a micro crystal defect on the rear surface of the wafer wherein the crystal defect can be used as a gettering site functioning to getter impurities. CONSTITUTION: A silicon single crystal ingot is thinly sawed. The surface of the sawed ingot is ground to be planarized. A cleaning process is performed and a heat treatment process is carried out. Both surfaces of a wafer are polished. The micro crystal defect generated on one surface of the wafer in the previous process is completely eliminated. The micro crystal defect generated on the other surface is partially left.