发明名称 Selective T-gate process
摘要 A process of simultaneously forming a plurality of metal features on a substrate, in which at least one metal feature has undercut sides and at least one metal feature does not have undercut sides involves the application of a lower photoresist feature having rounded sides and an upper photoresist feature having undercut sides wherein the upper photoresist feature is positioned in offset relation to the lower photoresist feature such that one edge of the upper photoresist feature does not extend over the corresponding edge of the lower photoresist feature and the other edge of the upper photoresist feature does extend beyond the corresponding edge of the lower photoresist feature.
申请公布号 US6524937(B1) 申请公布日期 2003.02.25
申请号 US20000644131 申请日期 2000.08.23
申请人 TYCO ELECTRONICS CORP. 发明人 CHENG YING MICHAEL;LEPKOWSKI THOMAS RICHARD;VARMAZIS COSTAS
分类号 G03F7/26;G03F7/40;G03F7/42;H01L21/285;H01L21/335;H01L21/337;H01L21/338;H01L29/423;H01L29/43;H01L29/772;H01L29/778;H01L29/812;(IPC1-7):H01L21/44 主分类号 G03F7/26
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