| 摘要 |
An exemplary embodiment of the present invention discloses a method for forming a forming a storage capacitor having a uniform dielectric film, by a the steps of: forming a bottom electrode of the storage capacitor and an insulation material about the bottom electrode, the bottom electrode comprises a nitridation receptive material and the insulation material comprises a nitridation resistive material; depositing a layer of non-doped silicon to a thickness of 20Å or less over the bottom electrode and the insulation material; converting the silicon layer to a silicon nitride compound; depositing a silicon nitride of uniform thickness directly on the silicon nitride compound while using the silicon nitride compound as a nitride-nucleation enhancing surface; exposing the silicon nitride compound and the silicon nitride layer to an oxidation ambient to form a storage capacitor dielectric film; and then forming a top electrode of the storage capacitor over the storage capacitor dielectric film.
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